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RGW50TK65GVC11 +BOM
IGBT Transistors High-Speed Fast Switching Type, 650V 18A, TO-3PFM, Field Stop Trench IGBT
BGA-
Manufacturer:
-
Mfr.Part #:
RGW50TK65GVC11
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Datasheet:
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Technology:
Si
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Mounting Style:
Through Hole
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Configuration:
Single
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Collector- Emitter Voltage VCEO Max:
650 V
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EDA/CAD Models:
Availability: 7361 PCS
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RGW50TK65GVC11 General Description
IGBT Trench Field Stop 650 V 30 A 67 W Through Hole TO-3PFM
Specifications
Product Category: | IGBT Transistors | Technology: | Si |
Mounting Style: | Through Hole | Configuration: | Single |
Collector- Emitter Voltage VCEO Max: | 650 V | Collector-Emitter Saturation Voltage: | 1.9 V |
Maximum Gate Emitter Voltage: | - 30 V, 30 V | Continuous Collector Current at 25 C: | 30 A |
Pd - Power Dissipation: | 67 W | Minimum Operating Temperature: | - 40 C |
Maximum Operating Temperature: | + 175 C | Packaging: | Tube |
Continuous Collector Current Ic Max: | 18 A | Gate-Emitter Leakage Current: | 200 nA |
Product Type: | IGBT Transistors | Factory Pack Quantity: | 30 |
Subcategory: | IGBTs | Part # Aliases: | RGW50TK65 |
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In Stock: 7,361
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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