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Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
HIP247Manufacturer:
Mfr.Part #:
SCT30N120
Datasheet:
ECCN US:
EAR99
ECCN EU:
NEC
Packing Type:
Tube
Grade:
Industrial
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The SCT30N120 silicon carbide Power MOSFET redefines power management with its breakthrough technology and innovative design. Leveraging the unique characteristics of wide bandgap materials, this device offers unmatched on-resistance per unit area and exceptional switching performance that remains stable even in extreme temperature variations. The use of silicon carbide guarantees superior thermal properties, while the HiP247™ package enhances thermal dissipation, allowing for industry-leading thermal capability in a standard package footprint. Ideal for high-efficiency and high power density applications, the SCT30N120 empowers designers to achieve optimal performance and reliability in their power electronics systems
ECCN US | EAR99 | ECCN EU | NEC |
Packing Type | Tube | Grade | Industrial |
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