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SCTH90N65G2V-7 +BOM

Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package

Manufacturer:

STMicroelectronics, Inc
Mfr.Part #:

SCTH90N65G2V-7
Datasheet:

SCTH90N65G2V-7 Datasheet (PDF)
FET Type:

N-Channel
Technology:

SiCFET (Silicon Carbide)
Drain To Source Voltage (Vdss):

650 V
Current - Continuous Drain (Id) @ 25°C:

90A (Tc)

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

SCTH90N65G2V-7 General Description

Meet the SCTH90N65G2V-7, a silicon carbide Power MOSFET that showcases the latest innovations in SiC MOSFET technology. Designed using ST’s cutting-edge 2nd generation technology, this device offers industry-leading on-resistance per unit area and superior switching performance. What really sets it apart is its ability to deliver consistent switching performance regardless of junction temperature, giving engineers the confidence that the device will perform reliably in a wide range of operating conditions

Key Features

Superior thermal shock resistance and radiation hardness
Extremely low power consumption and noise immunity

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	-
FET Type	N-Channel	Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V	Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V	Rds On (Max) @ Id, Vgs	26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id	5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs	157 nC @ 18 V
Vgs (Max)	+22V, -10V	Input Capacitance (Ciss) (Max) @ Vds	3300 pF @ 400 V
FET Feature	-	Power Dissipation (Max)	330W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	SCTH90