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SCTW35N65G2VAG +BOM

Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package

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SCTW35N65G2VAG General Description

The SCTW35N65G2VAG is a cutting-edge silicon carbide Power MOSFET that boasts ST's latest 2nd generation SiC MOSFET technology. This device offers an incredibly low on-resistance per unit area and superior switching performance, setting it apart from other power MOSFETs on the market. What makes this device truly stand out is its ability to maintain consistent switching loss regardless of junction temperature, ensuring reliable and efficient performance in various operating conditions

STMicroelectronics, Inc Inventory

Key Features

  • Robust and fast switching performance
  • High power dissipation
  • Low electromagnetic interference
  • High isolation voltage
STMicroelectronics, Inc Original Stock
STMicroelectronics, Inc Inventory

Specifications

Marketing Status Active ECCN (US) EAR99
ECCN (EU) NEC Packing Type Tube
Temperature (°C) min - Temperature (°C) max -

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Ratings and Reviews

More
S
S**l 08/05/2023

It came very quickly literally two weeks, did not expect, until i checked, qty 50 pcs.

16
B
B**y 06/20/2023

Έφτασε γρήγορα, σε απλή συσκευασία αλλά ακέραιο. Δεν δοκιμάστηκε ακόμα.

19
J
J**a 08/31/2022

Tavar will get quickly. 14 days to zhitomir ukraine. until i checked (check, before i write a review)

15
D
D**N 08/04/2020

great as always. quick shipping and good quality sensor.

18

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