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SCTW60N120G2AG +BOM

Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 package

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SCTW60N120G2AG General Description

Elevate your power electronics designs with the SCTW60N120G2AG, a silicon carbide Power MOSFET that sets a new standard for efficiency and performance. By capitalizing on the unique characteristics of wide bandgap materials, this device offers unmatched on-resistance per unit area and exceptional switching capabilities that are virtually unaffected by temperature variations. The superior thermal properties of the SiC material enable designers to incorporate an industry-standard outline with significantly enhanced thermal performance. Whether you're working on high-efficiency applications or high power density projects, this MOSFET is engineered to deliver outstanding results and reliability

STMicroelectronics, Inc Inventory

Key Features

  • AEC-Q101 qualified
  • High speed switching performance
  • Very fast and robust intrinsic body diode
  • Low capacitances
  • Very high operating junction temperature capability (TJ = 200 °C)
STMicroelectronics, Inc Original Stock
STMicroelectronics, Inc Inventory

Specifications

Marketing Status Active ECCN (US) EAR99
ECCN (EU) NEC Packing Type Tube
Temperature (°C) min - Temperature (°C) max -

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