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See Technical Specifications

SI1539CDL-T1-GE3 +BOM

Voltage: 30 Volts, Current: 0.7 Amps, Power: 0.34 Watts

Manufacturer:

Vishay
Mfr.Part #:

SI1539CDL-T1-GE3
Datasheet:

SI1539CDL-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel, P-Channel
Number Of Channels:

2 Channel
EDA/CAD Models:

Request Free CAD Models for SI1539CDL-T1-GE3

SI1539CDL-T1-GE3 General Description

Designed to meet the demanding needs of modern electronics, the SI1539CDL-T1-GE3 MOSFET serves as a reliable solution for high-power applications. With a power dissipation capability of 340mW, this 6-pin device can deliver consistent performance in challenging environments. Its compact SOT-363 case style enhances space efficiency while maintaining a robust construction for durability. Whether used in consumer electronics or industrial machinery, this MOSFET guarantees efficient power management and reliable operation

Key Features

High surge current capability
Low noise in audio applications
Precise control in motor control
Robust against electromagnetic interference

Application

SWITCHING

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel, P-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	700 mA	Rds On - Drain-Source Resistance	388 mOhms, 890 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2.5 V
Qg - Gate Charge	3 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	340 mW
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI1	Configuration	Dual
Fall Time	15 ns	Product Type	MOSFET
Rise Time	25 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time	12 ns	Typical Turn-On Delay Time	26 ns
Part # Aliases	SI1539CDL-T1-BE3 SI1539CDL-GE3	Unit Weight	0.000265 oz