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SI1553CDL-T1-GE3 +BOM

SI1553CDL-T1-GE3 Dual N/P-channel MOSFET Transistor, 0.4A, 0.7A, 20V, 6-Pin SOT-363

Manufacturer:

VISHAY
Mfr.Part #:

SI1553CDL-T1-GE3
Datasheet:

SI1553CDL-T1-GE3 Datasheet (PDF)
Technology:

MOSFET (Metal Oxide)
Configuration:

N and P-Channel
FET Feature:

Logic Level Gate
Drain To Source Voltage (Vdss):

20V

SI1553CDL-T1-GE3 General Description

The SI1553CDL-T1-GE3 is a versatile transistor with complementary N and P channel capabilities. Its specifications include a 20V drain source voltage Vds, a continuous drain current Id of 700mA, and an on resistance Rds(On) of 0.325Ohm. This surface mount transistor is equipped with an Rds(On) test voltage Vgs of 4.5V and has a total of 6 pins. It is important to note that this product is not RoHS compliant

Key Features

This power MOSFET boasts a low on-resistance of 2.5mΩ
The SI15XX series offers high-frequency performance and reliability
Compact PowerPAK SO-8 package simplifies circuit integration
Suitable for DC-DC conversion, power supply, and motor control
This MOSFET excels in high-frequency DC-DC conversion applications
Power management solutions benefit from its low on-resistance design

Application

["Load Switch ", "DC/DC Converter"]

Specifications

Technology	MOSFET (Metal Oxide)	Configuration	N and P-Channel
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	700mA, 500mA	Rds On (Max) @ Id, Vgs	390mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	1.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	38pF @ 10V	Power - Max	340mW
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount