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SI1902CDL-T1-GE3 +BOM

MOSFET, DUAL, N-CH, 20V, 1.1A, SOT-363-6; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:1.1A; Source Voltage Vds:20V; On

Manufacturer:

VISHAY
Mfr.Part #:

SI1902CDL-T1-GE3
Datasheet:

SI1902CDL-T1-GE3 Datasheet (PDF)
Part Life Cycle Code:

Active
ECCN Code:

EAR99
Configuration:

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:

20 V

SI1902CDL-T1-GE3 General Description

Vishay's SI1902CDL-T1-GE3 is a dual N-channel MOSFET that can handle a drain-source voltage of 20V and a continuous drain current of 1.1A. With its 6-pin configuration, this MOSFET offers easy integration into circuit designs, making it ideal for a variety of applications. Plus, being RoHS compliant, it meets environmental standards aimed at reducing hazardous substances in electronic products

Key Features

TrenchFET® power MOSFET

100 % Rg tested

Application

High speed switching G1 G2

Specifications

Part Life Cycle Code	Active	Reach Compliance Code
ECCN Code	EAR99	Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	20 V	Drain Current-Max (ID)	1.1 A
Drain-source On Resistance-Max	0.235 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-G6	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	2
Number of Terminals	6	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	0.42 W	Surface Mount	YES
Terminal Finish	Matte Tin (Sn)	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON