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SI2300DS-T1-GE3 +BOM

Small Signal Field-Effect Transistor, 3.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Manufacturer:

VISHAY
Mfr.Part #:

SI2300DS-T1-GE3
Datasheet:

SI2300DS-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2300DS-T1-GE3

SI2300DS-T1-GE3 General Description

The SI2300DS-T1-GE3 from Vishay Siliconix is a high-performance P-channel MOSFET transistor that packs a punch in a small package. With its tiny chip size of 1.61 mm x 1.61 mm, it's perfect for applications where space is limited but performance is key. This transistor boasts impressive specs, including a maximum drain-source voltage of -20 V, a continuous drain current of -3.1 A, and a power dissipation of 1.8 W. Its low on-resistance of 0.18 ohms at a gate-source voltage of -4.5 V ensures efficient power conversion and minimal power loss, making it a top choice for power management and load switching applications

Key Features

This is a P-channel MOSFET transistor with a maximum drain-source voltage of -20V and a continuous drain current of -1A.
It has a low on-resistance of 0.401 Ohm and can operate at temperatures ranging from -55°C to 150°C.

Application

SWITCHING

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	3.6 A	Rds On - Drain-Source Resistance	68 mOhms
Vgs - Gate-Source Voltage	- 12 V, + 12 V	Vgs th - Gate-Source Threshold Voltage	1.5 V
Qg - Gate Charge	3 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.7 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	11 ns	Height	1.45 mm
Length	2.9 mm	Product Type	MOSFET
Rise Time	15 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	20 ns	Typical Turn-On Delay Time	10 ns
Width	1.6 mm	Part # Aliases	SI2300DS-T1-BE3 SI2300DS-GE3
Unit Weight	0.000282 oz