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SI2301BDS-T1-GE3 +BOM

Tape and Reel Packaged P-Channel MOSFET, 20V, 2.2A, TO-236 Configuration"

SI2301BDS-T1-GE3 General Description

P-Channel 20 V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

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Key Features

  • 1. Transistor Type: P-Channel
  • 2. Drain-Source Voltage (VDS): -20V
  • 3. Continuous Drain Current (ID): -2.3A
  • 4. Gate-Source Threshold Voltage (VGS(th)): -0.6V to -1.5V
  • 5. Low On-Resistance (RDS(on)): 190mΩ maximum
  • 6. Compact and SOT-23-3 package
VISHAY Original Stock

Application

  • 1. Switching applications in power management circuits.
  • 2. Battery protection circuits.
  • 3. Load switching in portable devices.
  • 4. DC-DC converters and inverters.
  • 5. Motor control.
VISHAY Inventory

Specifications

Series TrenchFET® FET Type P-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 100mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 375 pF @ 6 V FET Feature -
Power Dissipation (Max) 700mW (Ta) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Base Product Number SI2301

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In Stock: 5,738

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.158 $0.16
10+ $0.130 $1.30
30+ $0.118 $3.54
100+ $0.104 $10.40
500+ $0.097 $48.50
1000+ $0.093 $93.00

The prices below are for reference only.

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