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SI2301CDS-T1-BE3 +BOM

P-Channel 20 V 2.3A (Ta), 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)

SI2301CDS-T1-BE3 General Description

P-Channel 20 V 2.3A (Ta), 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)

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Key Features

  • 1. Package type: SOT-23
  • 2. Drain-Source Voltage (Vdss): 20 V
  • 3. Drain-Source Current (Id): 2.1 A
  • 4. Continuous Drain Current (Id) at 25°C: 1.9 A
  • 5. Gate-Source Voltage (Vgs): ± 20 V
  • 6. Low on-resistance (Rds(on)) for efficient power management
  • 7. Fast switching speed for improved performance
  • 8. Low threshold voltage for easy drive circuit compatibility
VISHAY Original Stock

Application

  • 1. Power management in portable devices
  • 2. Battery charging circuits
  • 3. DC-DC converters
  • 4. Switching regulators
  • 5. Load switches
  • 6. Motor control circuits
  • 7. LED lighting control
  • 8. Power supply switch
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Specifications

Series - FET Type P-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta), 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 112mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 405 pF @ 10 V FET Feature -
Power Dissipation (Max) 860mW (Ta), 1.6W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

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