This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

SI2301CDS-T1-GE3 +BOM

With a threshold voltage of 1V at 250uA, this MOSFET offers efficient performance in low-power circuits

Manufacturer:

Vishay
Mfr.Part #:

SI2301CDS-T1-GE3
Datasheet:

SI2301CDS-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2301CDS-T1-GE3

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

SI2301CDS-T1-GE3 General Description

The SI2301CDS-T1-GE3 boasts a compact design and high efficiency, making it ideal for space-constrained applications where power consumption is a concern. Its low on resistance and high threshold voltage allow for precise control of current flow, resulting in improved overall performance. Whether used in consumer electronics, industrial equipment, or automotive systems, this transistor delivers consistent and dependable operation

Key Features

None

Application

SWITCHING

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	3.1 A	Rds On - Drain-Source Resistance	112 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	3.3 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.6 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	10 ns	Product Type	MOSFET
Rise Time	35 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	30 ns	Typical Turn-On Delay Time	11 ns
Part # Aliases	SI2301CDS-T1-BE3 SI2301CDS-GE3	Unit Weight	0.000282 oz