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SI2302ADS-T1-E3 +BOM
Small Signal Field-Effect Transistor, 2.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, ROHS COMPLIANT PACKAGE-3
SOT-
Manufacturer:
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Mfr.Part #:
SI2302ADS-T1-E3
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Datasheet:
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
20 V
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Current - Continuous Drain (Id) @ 25°C:
2.1A (Ta)
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EDA/CAD Models:
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SI2302ADS-T1-E3 General Description
The SI2302ADS-T1-E3 MOSFET is a standout choice for those seeking superior performance in high-speed switching applications. With a negligible on-state resistance of only 95 milliohms at a gate voltage of 4.5 volts, this MOSFET delivers exceptional power management and reduced power losses. Its compact SOT-23 package makes it an ideal solution for space-constrained applications, ensuring optimal performance in portable electronics, power supplies, and battery management systems. Featuring a maximum drain-source voltage of 20 volts and a continuous drain current rating of 2.7 amperes, the SI2302ADS-T1-E3 offers reliable operation for applications requiring moderate power levels
Key Features
- 1. It is a P-channel MOSFET with a maximum threshold voltage of -1.8V.
- 2. It has a maximum drain-source voltage (Vds) of -20V and a continuous drain current (Id) of -2.5A.
- 3. It has a low on-resistance (Rds(on)) of approximately 70mΩ.
- 4. It has a small form factor, with SOT-23 package type.
Application
- 1. Switching circuits: SI2302ADS-T1-E3 can be used as a power switch in various electronic circuits, controlling current flow to other components.
- 2. Basic amplification: It can be utilized in signal amplification applications with low power requirements.
- 3. Battery-driven applications: Due to its low on-resistance and small package size, it is suitable for battery-powered devices like smartphones, tablets, and portable electronics.
Specifications
Series | - | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 2.1A (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 60mOhm @ 3.6A, 4.5V | Vgs(th) (Max) @ Id | 1.2V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V | Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 10 V | FET Feature | - |
Power Dissipation (Max) | 700mW (Ta) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | SI2302 |
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Product as described. Arrived in less than 30 days in Lauro De Freitas BA.