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SI2302CDS-T1-BE3 +BOM

N-Channel 20 V (D-S) MOSFET

Manufacturer:

Vishay
Mfr.Part #:

SI2302CDS-T1-BE3
Datasheet:

SI2302CDS-T1-BE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2302CDS-T1-BE3

SI2302CDS-T1-BE3 General Description

One standout feature of the SI2302CDS-T1-BE3 is its continuous drain current of 2A, allowing it to handle moderate current loads with ease. Additionally, its low on-resistance of 0.08 ohms enhances power handling capabilities and minimizes power loss during switching operations. This makes the SI2302CDS-T1-BE3 a reliable choice for applications where efficiency is key

Key Features

Economical Design
Fast Switching Time
High Temperature Resistance
Rapid Response Time

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	2.9 A	Rds On - Drain-Source Resistance	57 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	850 mV
Qg - Gate Charge	3.5 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	860 mW
Channel Mode	Enhancement	Tradename	TrenchFET
Configuration	Single	Fall Time	7 ns
Product Type	MOSFET	Rise Time	7 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	30 ns
Typical Turn-On Delay Time	8 ns	Part # Aliases	SI2302CDS-T1-GE3
Unit Weight	0.000282 oz