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SI2302CDS-T1-GE3 +BOM
N-channel 20V MOSFET with a 2.6A current rating in a SOT-23 package, part number SI2302CDS-T1-GE3
SOT-23-3-
Manufacturer:
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Mfr.Part #:
SI2302CDS-T1-GE3
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Datasheet:
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Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
N-Channel
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Number Of Channels:
1 Channel
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EDA/CAD Models:
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SI2302CDS-T1-GE3 General Description
The SI2302CDS-T1-GE3 is a N Channel Mosfet with a low On resistance of 0.045Ohm and a maximum Drain Source Voltage of 20V. This surface mount transistor has a maximum Continuous Drain Current of 2.9A and a Power Dissipation of 710mW. The Rds(On) Test Voltage is 2.5V, making it suitable for various applications. Please note that this product is not RoHS compliant
Key Features
Application
Load Switching for Portable Devices |DC/DC ConverterSpecifications
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 2.9 A | Rds On - Drain-Source Resistance | 57 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 850 mV |
Qg - Gate Charge | 3.5 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 860 mW |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Configuration | Single |
Fall Time | 7 ns | Height | 1.45 mm |
Length | 2.9 mm | Product Type | MOSFET |
Rise Time | 7 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 30 ns | Typical Turn-On Delay Time | 8 ns |
Width | 1.6 mm | Part # Aliases | SI2302CDS-T1-BE3 SI2302CDS-GE3 |
Unit Weight | 0.000282 oz |
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In Stock: 4,777
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