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SI2302DDS-T1-GE3 +BOM

MOSFET 20V Vds 8V Vgs SOT-23

Manufacturer:

VISHAY
Mfr.Part #:

SI2302DDS-T1-GE3
Datasheet:

SI2302DDS-T1-GE3 Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

20 V
Current - Continuous Drain (Id) @ 25°C:

2.9A (Tj)
EDA/CAD Models:

Request Free CAD Models for SI2302DDS-T1-GE3

SI2302DDS-T1-GE3 General Description

Upgrade your electronics projects with the SI2302DDS-T1-GE3, a standout small signal field-effect transistor that combines advanced technology with user-friendly design. Its compact TO-236AB package saves space without compromising on performance, and the N-channel configuration ensures compatibility with a wide range of circuit designs. Make the smart choice for your next project and experience the superior quality and versatility of the SI2302DDS-T1-GE3 transistor

Key Features

Low-voltage design
High-frequency performance

Application

Load Switching for Portable Devices |DC/DC Converter

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V	Current - Continuous Drain (Id) @ 25°C	2.9A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V	Rds On (Max) @ Id, Vgs	57mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id	850mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs	5.5 nC @ 4.5 V
Vgs (Max)	±8V	Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-	Power Dissipation (Max)	710mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Product Category	MOSFET	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	20 V	Id - Continuous Drain Current	2.9 A
Rds On - Drain-Source Resistance	57 mOhms	Vgs - Gate-Source Voltage	- 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage	850 mV	Qg - Gate Charge	3.5 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	860 mW	Channel Mode	Enhancement
Tradename	TrenchFET	Series	SI2
Configuration	Single	Fall Time	7 ns
Product Type	MOSFET	Rise Time	7 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	30 ns
Typical Turn-On Delay Time	8 ns	Part # Aliases	SI2302DDS-T1-BE3
Unit Weight	0.000282 oz