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SI2303BDS-T1-E3 +BOM

Small Signal Field-Effect Transistor, 1.49A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

SI2303BDS-T1-E3 General Description

The SI2303BDS-T1-E3 is a P-channel MOSFET that operates at 30 volts with a continuous drain current of 1.49A. This small signal field-effect transistor is designed for use in various electronic applications where efficient power management is crucial. With its TO-236 packaging, this silicon-based FET offers reliable performance and durability

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Key Features

  • Halogen-free Option Available
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Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Tradename TrenchFET
Series SI2 Height 1.45 mm
Length 2.9 mm Product Type MOSFET
Factory Pack Quantity 3000 Subcategory MOSFETs
Width 1.6 mm Part # Aliases SI2303BDS-E3
Unit Weight 0.000282 oz

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