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SI2303CDS-T1-GE3 +BOM

Single P-Channel 30 V 0.19 Ohm Surface Mount Power MosFet - SOT-23-3

Manufacturer:

VISHAY
Mfr.Part #:

SI2303CDS-T1-GE3
Datasheet:

SI2303CDS-T1-GE3 Datasheet (PDF)
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

30 V
Current - Continuous Drain (Id) @ 25°C:

2.7A (Tc)
EDA/CAD Models:

Request Free CAD Models for SI2303CDS-T1-GE3

SI2303CDS-T1-GE3 General Description

The SI2303CDS-T1-GE3 is a versatile P-channel FET that is perfect for low voltage applications. With a drain-source voltage of -30V and a continuous drain current of -3.2A, this transistor is ideal for tasks like battery management and power switching. Its low on-resistance of 104mOhms ensures efficient power management while minimizing power loss. The SI2303CDS-T1-GE3 can handle a wide range of operating conditions with a power dissipation of 2.2W and a junction temperature range of -55°C to 150°C. Its compact SOT-23 package and small footprint make it easy to integrate into various circuit designs, even those with limited space constraints

Key Features

The transistor has a high degree of immunity to electromagnetic interference
The SI2303CDS-T1-GE3 is designed for low voltage, low current applications such as battery management

Application

SWITCHING

Specifications

FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	Current - Continuous Drain (Id) @ 25°C	2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	190mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	8 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	155 pF @ 15 V
FET Feature	-	Power Dissipation (Max)	1W (Ta), 2.3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount