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SI2303DS +BOM

Transistor,

SI2303DS General Description

■ Features● VDS (V) =-30V● RDS(ON) ＜ 200mΩ (VGS =-10V)● RDS(ON) ＜ 380mΩ (VGS =-4.5V)

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Key Features

  • 1. It has a low on-state resistance (RDS(on)), which leads to minimal power losses.
  • 2. The component is designed to operate at a voltage range of around -20V to -12V.
  • 3. It has a continuous drain current rating of approximately -2.5A.
  • 4. SI2303DS offers enhanced performance in terms of switching speed and efficiency.
  • 5. The component is housed in a miniature SOT-23 surface mount package, ensuring space-saving installation.
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Application

  • 1. Due to its voltage and current ratings, SI2303DS is commonly used in battery management systems.
  • 2. It finds applications in power management circuits requiring P-channel MOSFETs.
  • 3. The component is suitable for load switches, power routing, and reverse polarity protection in various electronic devices.
  • 4. SI2303DS can be employed in portable electronics, consumer electronics, and automotive systems requiring efficient power control.
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Specifications

Product Category IC Chips

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