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See Technical Specifications

SI2305CDS-T1-GE3 +BOM

TO-236AB Package, 5.8A I(D), 8V Rating

Manufacturer:

Vishay
Mfr.Part #:

SI2305CDS-T1-GE3
Datasheet:

SI2305CDS-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2305CDS-T1-GE3

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SI2305CDS-T1-GE3 General Description

Designed for high-performance applications, the SI2305CDS-T1-GE3 MOSFET delivers a powerful solution with a continuous drain current of -5.8A and a drain-source voltage of -8V. Featuring a low on-resistance of 28mohm and a maximum power dissipation of 960mW, this P-channel transistor operates effectively in temperatures spanning from -55°C to +150°C. The SOT-23 package style, equipped with 3 pins, ensures easy integration into diverse circuit designs. Despite lacking any SVHC, this transistor can withstand a maximum voltage of 8V, making it a reliable choice for demanding electronic applications

Key Features

None

Application

Load Switch for Portable Devices |DC/DC Converter

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	8 V
Id - Continuous Drain Current	5.8 A	Rds On - Drain-Source Resistance	35 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	12 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.7 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	10 ns	Height	1.45 mm
Length	2.9 mm	Product Type	MOSFET
Rise Time	20 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	40 ns	Typical Turn-On Delay Time	20 ns
Width	1.6 mm	Part # Aliases	SI2305CDS-T1-BE3 SI2305CDS-GE3
Unit Weight	0.000282 oz