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SI2306BDS-T1-BE3 +BOM

N-Channel 30 V 3.16A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

SI2306BDS-T1-BE3 General Description

N-Channel 30 V 3.16A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

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Key Features

  • TrenchFET® power MOSFET
  • 100 % Rg and UIS tested
    • Vishay Original Stock
    Vishay Inventory

    Specifications

    Product Category MOSFET Technology Si
    Mounting Style SMD/SMT Transistor Polarity N-Channel
    Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
    Id - Continuous Drain Current 3.16 A Rds On - Drain-Source Resistance 47 mOhms
    Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
    Qg - Gate Charge 3 nC Minimum Operating Temperature - 55 C
    Maximum Operating Temperature + 150 C Pd - Power Dissipation 750 mW
    Channel Mode Enhancement Configuration Single
    Fall Time 6 ns Product Type MOSFET
    Rise Time 12 ns Factory Pack Quantity 3000
    Subcategory MOSFETs Transistor Type 1 N-Channel
    Typical Turn-Off Delay Time 14 ns Typical Turn-On Delay Time 7 ns
    Part # Aliases SI2306BDS-T1-E3 Unit Weight 0.000282 oz

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    In Stock: 7,072

    Minimum Order: 1

    Qty. Unit Price Ext. Price
    1+ $0.308 $0.31
    200+ $0.123 $24.60
    500+ $0.119 $59.50
    1000+ $0.117 $117.00

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