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SI2307BDS-T1-E3 +BOM

This product is compactly designed in a SOT-23 package for easy integration into circuit designs

SI2307BDS-T1-E3 General Description

Product SI2307BDS-T1-E3 is a robust P Channel Mosfet designed to handle a maximum drain source voltage of 30V with a continuous drain current of 2.5A. This Surface Mount transistor comes in a TO-236 package and is ideal for various applications requiring high power efficiency. With a low Rds(On) test voltage of 10V, this MOSFET offers efficient power management capabilities. The maximum gate source threshold voltage is 3V, ensuring reliable performance in different circuit configurations

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Key Features

  • Premium Power Management
  • Compact Design Technology
  • Sustainable Energy Solutions
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Application

  • Smart home devices
  • Power distribution systems
  • Robotics technology
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Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 2.5 A Rds On - Drain-Source Resistance 78 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 9 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 750 mW
Channel Mode Enhancement Tradename TrenchFET
Series SI2 Configuration Single
Fall Time 14 ns Height 1.45 mm
Length 2.9 mm Product Type MOSFET
Rise Time 12 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 25 ns Typical Turn-On Delay Time 9 ns
Width 1.6 mm Part # Aliases SI2307BDS-T1-BE3 SI2307BDS-E3
Unit Weight 0.000282 oz

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