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SI2307BDS-T1-GE3 +BOM

Low-on-resistance MOSFET ideal for efficient power conversio

SI2307BDS-T1-GE3 General Description

P-Channel 30 V 2.5A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

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Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 2.5 A Rds On - Drain-Source Resistance 78 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 9 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 750 mW
Channel Mode Enhancement Tradename TrenchFET
Series SI2 Configuration Single
Fall Time 14 ns Forward Transconductance - Min 5 S
Height 1.45 mm Length 2.9 mm
Product Type MOSFET Rise Time 12 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 25 ns
Typical Turn-On Delay Time 9 ns Width 1.6 mm
Part # Aliases SI2307BDS-GE3 Unit Weight 0.000282 oz

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In Stock: 7,072

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Qty. Unit Price Ext. Price
1+ $0.303 $0.30
10+ $0.297 $2.97
30+ $0.292 $8.76
100+ $0.289 $28.90

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