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SI2307CDS-T1-E3 +BOM

MOSFET -30V Vds 20V Vgs SOT-23

SI2307CDS-T1-E3 General Description

TRANSISTOR 3500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal

Key Features

  • Economic power MOSFET
  • Fast response time FET
  • Low inductance package

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 3.5 A Rds On - Drain-Source Resistance 88 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 4.1 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.8 W
Channel Mode Enhancement Tradename TrenchFET
Series SI2 Configuration Single
Fall Time 7.7 ns Forward Transconductance - Min 7 S
Product Type MOSFET Rise Time 13 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 17 ns
Typical Turn-On Delay Time 5.5 ns Part # Aliases SI2307CDS-T1-BE3 SI2307CDS-E3
Unit Weight 0.000282 oz

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In Stock: 7,230

Minimum Order: 1

Qty. Unit Price Ext. Price
5+ $0.181 $0.90
50+ $0.157 $7.85
150+ $0.147 $22.05
500+ $0.134 $67.00
3000+ $0.128 $384.00
6000+ $0.125 $750.00

The prices below are for reference only.

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