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SI2307CDS-T1-GE3 +BOM

-30V drain-source voltage MOSFET with 20V gate-source voltage in SOT-23 package

Manufacturer:

Vishay
Mfr.Part #:

SI2307CDS-T1-GE3
Datasheet:

SI2307CDS-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2307CDS-T1-GE3

SI2307CDS-T1-GE3 General Description

The SI2307CDS-T1-GE3 MOSFET is ideal for various applications requiring P-channel transistors, such as power management, load switching, and DC-DC converters. Its high current and voltage capabilities, low on-resistance, and efficient power dissipation make it a reliable choice for electronic designs where space and heat are critical concerns. With its SOT-23 case style, it can be easily mounted on circuit boards for efficient thermal management

Key Features

Advanced thermal management system
Low EMI and RFI emission
Fault-tolerant circuit design
Surge protection diode integration

Application

SWITCHING

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	3.5 A	Rds On - Drain-Source Resistance	88 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	4.1 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.8 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	7.7 ns	Height	1.45 mm
Length	2.9 mm	Product Type	MOSFET
Rise Time	13 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	17 ns	Typical Turn-On Delay Time	5.5 ns
Width	1.6 mm	Part # Aliases	SI2307CDS-T1-BE3 SI2307CDS-GE3
Unit Weight	0.000282 oz