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Low on-resistance of 156mΩ at 10V
SOT-23-3Manufacturer:
Mfr.Part #:
SI2308BDS-T1-E3
Datasheet:
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
EDA/CAD Models:
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N-Channel 60 V 2.3A (Tc) 1.09W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236)
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 2.3 A | Rds On - Drain-Source Resistance | 156 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 6.8 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.66 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Configuration | Single |
Fall Time | 7 ns | Forward Transconductance - Min | 5 S |
Product Type | MOSFET | Rise Time | 10 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 10 ns |
Typical Turn-On Delay Time | 4 ns | Part # Aliases | SI2308BDS-T1-BE3 SI2308BDS-E3 |
Unit Weight | 0.000282 oz |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.327 | $0.33 |
10+ | $0.263 | $2.63 |
30+ | $0.235 | $7.05 |
100+ | $0.198 | $19.80 |
500+ | $0.182 | $91.00 |
1000+ | $0.173 | $173.00 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to
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