This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

SI2308BDS-T1-GE3 +BOM

This product is a N-channel MOSFET designed for a maximum voltage of 60V and a current of 1.9A, enclosed in a SOT-23 package with 3 pins

Manufacturer:

Vishay
Mfr.Part #:

SI2308BDS-T1-GE3
Datasheet:

SI2308BDS-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2308BDS-T1-GE3

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

SI2308BDS-T1-GE3 General Description

The SI2308BDS-T1-GE3 is a N-channel MOSFET transistor capable of handling a maximum current of 2.3A and a maximum voltage of 60V. With a low on-state resistance of 130mohm and a power dissipation of 1.09W, this transistor is suitable for a wide range of applications including voltage regulation and power management. Operating in a temperature range from -55°C to +150°C, the transistor comes in a SOT-23 case style with 3 pins for easy integration into electronic circuits

Key Features

Halogen-free according to IEC 61249-2-21 available,TrenchFET® power MOSFET,100 % Rg and UIS tested

Application

Battery Switch |DC/DC Converter

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	2.3 A	Rds On - Drain-Source Resistance	156 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	2.3 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.66 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	7 ns	Product Type	MOSFET
Rise Time	10 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	10 ns	Typical Turn-On Delay Time	4 ns
Part # Aliases	SI2308BDS-T1-BE3 SI2308BDS-GE3	Unit Weight	0.000282 oz