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SI2308CDS-T1-GE3 +BOM

Small signal field-effect transistor

SI2308CDS-T1-GE3 General Description

N-Channel 60 V 2.6A (Tc) 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)

Key Features

  • Low on-state resistance
  • High frequency switching
  • Ruggedized package design

Application

SWITCHING

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 2.6 A Rds On - Drain-Source Resistance 200 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 2 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.6 W
Channel Mode Enhancement Series Si2308CDS
Configuration Single Fall Time 16 ns
Forward Transconductance - Min 3.2 S Product Type MOSFET
Rise Time 25 ns Factory Pack Quantity 3000
Subcategory MOSFETs Typical Turn-Off Delay Time 10 ns
Typical Turn-On Delay Time 23 ns Unit Weight 0.000282 oz

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