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See Technical Specifications

SI2309CDS-T1-GE3 +BOM

ROHS-certified SOT-23 MOSFETs

Manufacturer:

Vishay
Mfr.Part #:

SI2309CDS-T1-GE3
Datasheet:

SI2309CDS-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2309CDS-T1-GE3

SI2309CDS-T1-GE3 General Description

Featuring a compact SOT-23 package, the SI2309CDS-T1-GE3 is ideal for space-constrained designs. It offers fast switching speeds, low gate charge, and high current-handling capability, making it suitable for a wide range of low to moderate power applications across industries such as consumer electronics, automotive, industrial automation, and telecommunications. The MOSFET's high drain-source voltage rating ensures robustness and reliability in demanding environments

Key Features

This MOSFET has a high level of thermal stability
Operating voltage range: 0V to 20V
Suitable for automotive and industrial applications

Application

Battery management systems
Low on-state resistance
MOSFET for power supplies

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	1.6 A	Rds On - Drain-Source Resistance	345 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	2.7 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.7 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	10 ns	Height	1.45 mm
Length	2.9 mm	Product Type	MOSFET
Rise Time	10 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	15 ns	Typical Turn-On Delay Time	5 ns
Width	1.6 mm	Part # Aliases	SI2309CDS-T1-BE3 SI2309CDS-GE3
Unit Weight	0.000282 oz