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SI2309DS +BOM

TO-236 Packaged P-Channel 60V MOSFET

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SI2309DS General Description

Housed in a TO-252 package, the SI2309DS offers excellent thermal stability and easy mounting on PCBs. Its gate-source voltage threshold of -2.5V makes it perfect for battery-powered devices, where energy efficiency is a must. Furthermore, with a maximum junction temperature of 150°C, this transistor can withstand harsh operating conditions without compromising performance

Key Features

  • High-current handling capability
  • Pulse duration modulation supported
  • Wide operating temperature range
  • Enhanced electromagnetic immunity
  • Safe-start functionality enabled
  • Advanced overcurrent protection

Application

  • LED lighting systems
  • Smart home devices
  • Wireless communication
  • Medical equipment
  • Sensor networks
  • Environmental monitoring

Specifications

Product Category MOSFET Technology Si
Product Type MOSFET Factory Pack Quantity 3000
Subcategory MOSFETs

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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In Stock: 7,515

Minimum Order: 1

Qty. Unit Price Ext. Price
10+ $0.043 $0.43
100+ $0.035 $3.50
300+ $0.031 $9.30
3000+ $0.028 $84.00
6000+ $0.026 $156.00
9000+ $0.025 $225.00

The prices below are for reference only.

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