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SI2309DS-T1-E3 +BOM

SI2309DS-T1-E3 Recommended Replacement

Manufacturer:

VISHAY
Mfr.Part #:

SI2309DS-T1-E3
Datasheet:

SI2309DS-T1-E3 Datasheet (PDF)
Part Life Cycle Code:

Obsolete
Pin Count:

3
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for SI2309DS-T1-E3

Email: [email protected]

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SI2309DS-T1-E3 General Description

The SI2309DS-T1-E3 is a P Channel MOSFET transistor with a drain source voltage of -60V and a continuous drain current of -1.25A. It has an on resistance of 0.55ohm and Rds(on) test voltage of -10V. The package/case is SOT-23 and it is RoHS compliant, making it an environmentally friendly choice for your electronic projects

Key Features

-20V,-2.8A, RDS(ON)=120m@VGS=-4.5V

RDS(ON)=150m@VGS=-2.5V

High dense cell design for extremely low RDS(ON)

Rugged and reliable

High Speed Switching

SOT-23 Package

Marking Code: S1

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

Specifications

Part Life Cycle Code	Obsolete	Pin Count	3
Reach Compliance Code	compliant	ECCN Code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (ID)	0.00125 A	Drain-source On Resistance-Max	0.34 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-236
JESD-30 Code	R-PDSO-G3	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Polarity/Channel Type	P-CHANNEL	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Transistor Element Material	SILICON