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SI2312BDS-T1-E3 +BOM
Power Mosfet - SOT-23 package, Single N-Channel with 20V voltage rating and 0.031 Ohms resistance
SOT-23-
Manufacturer:
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Mfr.Part #:
SI2312BDS-T1-E3
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Datasheet:
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Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
N-Channel
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Number Of Channels:
1 Channel
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EDA/CAD Models:
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SI2312BDS-T1-E3 General Description
The SI2312BDS-T1-E3 MOSFET is a high-performance N-channel transistor with a maximum drain current of 5A, making it suitable for a wide range of power management applications. Its SOT-23 package and SMD marking "M2" enable easy integration into compact circuit designs, while the low on-resistance of 47mOhm ensures minimal power loss in high-frequency switching applications. With a maximum drain-source voltage of 20V and a threshold voltage of 850mV, this MOSFET offers reliable and efficient operation in various electronic systems. Additionally, the pulse current rating of 15A and the low power dissipation of 750µW further enhance its suitability for demanding environments. Engineers and designers can rely on the SI2312BDS-T1-E3 MOSFET to deliver consistent performance in consumer electronics, automotive systems, and industrial equipment, making it a valuable component for optimizing circuit efficiency and effectiveness
Specifications
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 5 A | Rds On - Drain-Source Resistance | 31 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 450 mV |
Qg - Gate Charge | 12 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.25 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Configuration | Single |
Fall Time | 10 ns | Forward Transconductance - Min | 30 S |
Height | 1.45 mm | Length | 2.9 mm |
Product Type | MOSFET | Rise Time | 30 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 35 ns |
Typical Turn-On Delay Time | 9 ns | Width | 1.6 mm |
Part # Aliases | SI2312BDS-T1-BE3 SI2312BDS-E3 | Unit Weight | 0.000282 oz |
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