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SI2312CDS-T1-GE3 +BOM

Small Signal Field-Effect Transistor, 2.3A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Manufacturer:

VISHAY
Mfr.Part #:

SI2312CDS-T1-GE3
Datasheet:

SI2312CDS-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2312CDS-T1-GE3

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SI2312CDS-T1-GE3 General Description

The SI2312CDS-T1-GE3 is a N-channel MOSFET with a continuous drain current of 6A and a Drain-Source Voltage of 20V. It has an on-resistance of 26.5mΩ and a maximum power dissipation of 1.25W. This MOSFET is designed for use in a wide operating temperature range of -55°C to +150°C and comes in a SOT-23 transistor case style with 3 pins

Key Features

TrenchFET® power MOSFET

100% Rg tested

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	6 A	Rds On - Drain-Source Resistance	31.8 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	8.8 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.1 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	8 ns	Height	1.45 mm
Length	2.9 mm	Product Type	MOSFET
Rise Time	17 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	31 ns	Typical Turn-On Delay Time	8 ns
Width	1.6 mm	Part # Aliases	SI2312CDS-T1-BE3 SI2312CDS-GE3 SI7621DN-T1-GE3
Unit Weight	0.000282 oz