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SI2315BDS-T1-E3 +BOM

Features: SI2315BDS-T1-E3 is a P-channel MOSFET crafted for applications demanding a maximum voltage of 12V and a current rating of 3A

SI2315BDS-T1-E3 General Description

P-Channel 12 V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Key Features

  • Halogen-free Option Available
  • TrenchFET® Power MOSFETs: 1.8 V Rated

Specifications

Part Life Cycle Code Not Recommended Reach Compliance Code compliant
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 12 V
Drain Current-Max (ID) 3 A Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 200 pF
JEDEC-95 Code TO-236AB JESD-30 Code R-PDSO-G3
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL Power Dissipation-Max (Abs) 0.75 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

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