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See Technical Specifications

SI2315DS +BOM

Dual N-channel MOSFET

Manufacturer:

VISHAY
Mfr.Part #:

SI2315DS
Datasheet:

SI2315DS Datasheet (PDF)
Drain-Source Voltage:

20V
Continuous Drain Current:

4.8A
On-Resistance:

68mΩ
Threshold Voltage:

1.2V
EDA/CAD Models:

Request Free CAD Models for SI2315DS

SI2315DS General Description

The SI2315DS is a compact, surface-mount N-channel MOSFET designed for low voltage applications. It's commonly used to switch and control electrical signals in electronic circuits.

Key Features

Dual N-channel enhancement mode MOSFET
Low on-resistance: typically 28 mΩ
Low threshold voltage: typically 1.8V
Fast switching speed
RoHS compliant
SOT-23 package

Application

Power management circuits
Load switching
Battery-powered devices
Low voltage logic-level applications
DC-DC converters
Portable electronics

Specifications

Product Name	SI2315DS	Product Type	N-Channel MOSFET Transistor
Drain-Source Voltage	20V	Continuous Drain Current	4.8A
On-Resistance	68mΩ	Threshold Voltage	1.2V
Operating Temperature	-55°C to +150°C	Mounting Type	Surface Mount
Packaging	Cut Tape	Product Category	MOSFET
Technology	Si	Mounting Style	SMD/SMT
Height	1.45 mm	Length	2.9 mm
Subcategory	MOSFETs	Width	1.6 mm
Unit Weight	0.000282 oz