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See Technical Specifications

SI2319DS-T1-BE3 +BOM

Compliant with ROHS regulations

Manufacturer:

VISHAY
Mfr.Part #:

SI2319DS-T1-BE3
Datasheet:

SI2319DS-T1-BE3 Datasheet (PDF)
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

40 V
Current - Continuous Drain (Id) @ 25°C:

2.3A (Ta)
EDA/CAD Models:

Request Free CAD Models for SI2319DS-T1-BE3

SI2319DS-T1-BE3 General Description

Suitable for use in a variety of industries, from automotive and industrial to consumer electronics, the SI2319DS-T1-BE3 offers reliable and efficient performance. Its high drain-source voltage and continuous drain current make it suitable for power management and voltage regulation applications, while its low on-resistance and fast switching speed make it ideal for use in motor control, load switching, and battery management systems

Key Features

1. N-Channel enhancement mode MOSFET.
2. Low on-resistance.
3. Low gate threshold voltage.
4. High-speed switching.
5. Small package size (SOT-23).

Application

The SI2319DS-T1-BE3 is commonly used in various electronic circuits where voltage control and switching is required. Some typical applications include:
1. Power management and distribution systems.
2. Battery charging and protection circuits.
3. DC-DC converters.
4. Motor control circuits.
5. Automotive applications.
6. Portable electronics.

Specifications

Series	-	FET Type	P-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	2.3A (Ta)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	82mOhm @ 3A, 10V	Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	470 pF @ 20 V	FET Feature	-
Power Dissipation (Max)	750mW (Ta)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount