This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

SI2323CDS-T1-GE3 +BOM

MOSFET with P-Channel and 20 V Drain-Source

Manufacturer:

Vishay
Mfr.Part #:

SI2323CDS-T1-GE3
Datasheet:

SI2323CDS-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2323CDS-T1-GE3

SI2323CDS-T1-GE3 General Description

Product SI2323CDS-T1-GE3 is a P channel MOSFET designed for applications where a low voltage, high current switch is required. With a continuous drain current of -6A and a drain source voltage of -20V, this MOSFET offers a low on resistance of 0.032ohm at a test voltage of -4.5V. With a power dissipation of 2.5W, it can operate reliably in a wide temperature range from -55°C to 150°C. The SOT-23 case style makes it compact and easy to integrate into circuit designs, with only 3 pins for simplified connections

Key Features

None

Application

Load Switch |PA Switch |DC/DC Converters

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	6 A	Rds On - Drain-Source Resistance	39 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	9 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.5 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	12 ns	Height	1.45 mm
Length	2.9 mm	Product Type	MOSFET
Rise Time	23 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	40 ns	Typical Turn-On Delay Time	15 ns
Width	1.6 mm	Part # Aliases	SI2323CDS-T1-BE3 SI2323CDS-GE3
Unit Weight	0.000282 oz