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SI2323DDS-T1-GE3 +BOM

VISHAY SI2323DDS-T1-GE3 Power MOSFET P Channel 20V 5.3A 0.032 ohm SOT-23 Surface Mount

Manufacturer:

VISHAY
Mfr.Part #:

SI2323DDS-T1-GE3
Datasheet:

SI2323DDS-T1-GE3 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for SI2323DDS-T1-GE3

SI2323DDS-T1-GE3 General Description

For your electronic circuit needs, consider the SI2323DDS-T1-GE3 small signal field-effect transistor. With a 5.3A I(D) and 20V capacity, this transistor offers reliable performance for a range of applications. Its P-channel silicon metal-oxide semiconductor FET design, TO-236AB package, and 3-pin configuration make it easy to integrate into your circuits. Plus, it's halogen-free and RoHS compliant, making it an environmentally responsible choice

Key Features

None

Application

["Load Switch ", "PA Switch ", "DC/DC Converters ", "Power Management G"]

Specifications

Pbfree Code	Yes	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	20 V
Drain Current-Max (ID)	5.3 A	Drain-source On Resistance-Max	0.039 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	120 pF
JEDEC-95 Code	TO-236AB	JESD-30 Code	R-PDSO-G3
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	P-CHANNEL	Power Dissipation-Max (Abs)	1.7 W
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON