Payment Method
SI2323DS-T1-E3 +BOM
Product SI2323DS-T1-E3 is a P-channel MOSFET in SOT-23 package
SOT-23-3-
Manufacturer:
-
Mfr.Part #:
SI2323DS-T1-E3
-
Datasheet:
-
Technology:
Si
-
Mounting Style:
SMD/SMT
-
Transistor Polarity:
P-Channel
-
Number Of Channels:
1 Channel
-
EDA/CAD Models:
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for SI2323DS-T1-E3, guaranteed quotes back within 12hr.
Availability: 7451 PCS
Please fill in the short form below and we will provide you the quotation immediately.
SI2323DS-T1-E3 General Description
The SI2323DS-T1-E3 MOSFET is a P-channel transistor designed to offer efficient power management and reliable performance in electronic circuits. With a continuous drain current of -4.7A and a drain-source voltage of -20V, this MOSFET is well-suited for typical operating conditions. The 39mohm on-resistance and test voltage of -4.5V ensure minimal power loss and efficient power handling. Its threshold voltage of -1V and maximum power dissipation of 1.25W make it an excellent choice for controlling power in various electronic devices. With a SOT-23 case style and 3 pins, it can be easily integrated into existing circuit designs. The surface-mount termination type and voltage specifications further enhance its versatility and compatibility with modern circuit board designs, making it an ideal solution for diverse electronic applications
Key Features
Application
SWITCHINGSpecifications
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 4.7 A | Rds On - Drain-Source Resistance | 39 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 400 mV |
Qg - Gate Charge | 19 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.25 W |
Channel Mode | Enhancement | Tradename | TrenchFET |
Series | SI2 | Configuration | Single |
Fall Time | 48 ns | Forward Transconductance - Min | 16 S |
Height | 1.45 mm | Length | 2.9 mm |
Product Type | MOSFET | Rise Time | 43 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 71 ns |
Typical Turn-On Delay Time | 25 ns | Width | 1.6 mm |
Part # Aliases | SI2323DS-T1-BE3 SI2323DS-E3 | Unit Weight | 0.000282 oz |
Service Policies and Others
After-Sales & Settlement Related
For alternative payment channels, please reach out to us at:
[email protected]Shipping Method
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
365-Day Product
Quality Guarantee
We promise to provide 365 days quality assurance service for all our products.
In Stock: 7,451
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.351 | $0.35 |
10+ | $0.306 | $3.06 |
30+ | $0.286 | $8.58 |
100+ | $0.261 | $26.10 |
500+ | $0.246 | $123.00 |
1000+ | $0.240 | $240.00 |
The prices below are for reference only.
Received in 20 days .. accidentally with another order how much on the post was a question... i think the seller sent well quickly. I haven't had time yet. .. With the seller did not communicate was not necessary...