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SI2325DS-T1-GE3 +BOM

Compact SOT-23 MOSFET designed for use in circuits requiring -150V Vds and 20V Vgs limitations

Manufacturer:

VISHAY
Mfr.Part #:

SI2325DS-T1-GE3
Datasheet:

SI2325DS-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2325DS-T1-GE3

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SI2325DS-T1-GE3 General Description

Engineered for power management, load switching, and battery protection circuits, the SI2325DS-T1-GE3 offers reliable performance and lightning-fast switching speeds. Its maximum power dissipation of 0.75W allows for sustained operation under heavy loads, making it a versatile choice for a wide range of electronic applications

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	150 V
Id - Continuous Drain Current	530 mA	Rds On - Drain-Source Resistance	1.2 Ohms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	4.5 V
Qg - Gate Charge	7.7 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	750 mW
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	11 ns	Height	1.45 mm
Length	2.9 mm	Product Type	MOSFET
Rise Time	11 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	16 ns	Typical Turn-On Delay Time	7 ns
Width	1.6 mm	Part # Aliases	SI2325DS-T1-BE3 SI2325DS-GE3
Unit Weight	0.000282 oz