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See Technical Specifications

SI2333CDS-T1-GE3 +BOM

Technical Specifications: This MOSFET features a voltage rating of 12V, an on-resistance of 0

Manufacturer:

Vishay
Mfr.Part #:

SI2333CDS-T1-GE3
Datasheet:

SI2333CDS-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2333CDS-T1-GE3

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SI2333CDS-T1-GE3 General Description

Featuring a P-channel design, the SI2333CDS-T1-GE3 from Vishay is a surface-mount transistor with a 12V drain-source voltage and a continuous drain current of 7.1A. With a Rds(On) test voltage of 4.5V and a maximum gate-source threshold voltage of 1V, this transistor offers reliable operation in various electronic circuits. Its power dissipation rating of 2.5W and 3-pin configuration make it a versatile component for commercial and industrial applications. It is important to be aware that this product is not RoHS compliant

Key Features

TrenchFET® power MOSFET

Application

Load Switch |PA Switch

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	12 V
Id - Continuous Drain Current	7.1 A	Rds On - Drain-Source Resistance	35 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	9 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.5 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	12 ns	Height	1.45 mm
Length	2.9 mm	Product Type	MOSFET
Rise Time	35 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	45 ns	Typical Turn-On Delay Time	13 ns
Width	1.6 mm	Part # Aliases	SI2333CDS-T1-BE3 SI2333CDS-GE3
Unit Weight	0.000282 oz