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SI2333DDS-T1-BE3 +BOM

This MOSFET boasts a minimal on-resistance of 28 milliohms at 5 amps under a 12-volt condition, ensuring efficient power delivery

SI2333DDS-T1-BE3 General Description

P-Channel 12 V 5A (Ta), 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

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Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 12 V
Id - Continuous Drain Current 6 A Rds On - Drain-Source Resistance 23 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 9 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.7 W
Channel Mode Enhancement Configuration Single
Fall Time 20 ns Product Type MOSFET
Rise Time 24 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 45 ns Typical Turn-On Delay Time 26 ns
Part # Aliases SI2333DDS-T1-GE3 Unit Weight 0.000282 oz

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In Stock: 7,072

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.306 $0.31
200+ $0.123 $24.60
500+ $0.118 $59.00
1000+ $0.116 $116.00

The prices below are for reference only.

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