This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

SI2333DDS-T1-GE3 +BOM

P Channel SOT-23 MOSFET with a voltage rating of 12V and a current handling capability of 6A at 28mΩ resistance when operated at 4.5V

Manufacturer:

Vishay
Mfr.Part #:

SI2333DDS-T1-GE3
Datasheet:

SI2333DDS-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2333DDS-T1-GE3

SI2333DDS-T1-GE3 General Description

The SI2333DDS-T1-GE3 is a small signal field-effect transistor designed for high performance in a variety of electronic applications. With a 6A I(D) and 12V capacity, this P-channel silicon MOSFET is built for reliability and efficiency. The TO-236AB package and halogen-free, RoHS compliant construction make it a sustainable choice for environmentally conscious projects. The 3-pin configuration of the TO-236 package ensures easy integration into existing circuitry, while the metal-oxide semiconductor design provides robustness and stability in operation. Whether used in amplifiers, voltage regulators, or other electronic devices, the SI2333DDS-T1-GE3 offers a compact and dependable solution for small signal switching needs

Key Features

None

Application

Smart Phones and Tablet PCs - Load Switch - Battery Switch

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	12 V
Id - Continuous Drain Current	6 A	Rds On - Drain-Source Resistance	23 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	9 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.7 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	20 ns	Height	1.45 mm
Length	2.9 mm	Product Type	MOSFET
Rise Time	24 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	45 ns	Typical Turn-On Delay Time	26 ns
Width	1.6 mm	Part # Aliases	SI2333DDS-T1-BE3
Unit Weight	0.000282 oz