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SI2338DS-T1-GE3 +BOM
N-Channel 30 V 28 mOhm 13 nC Surface Mount Power Mosfet - SOT-23-3
SOT-23-3-
Manufacturer:
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Mfr.Part #:
SI2338DS-T1-GE3
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Datasheet:
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Part Life Cycle Code:
Active
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Reach Compliance Code:
compliant
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
30 V
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EDA/CAD Models:
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SI2338DS-T1-GE3 General Description
The SI2338DS-T1-GE3 is a n-channel transistor designed for applications requiring a drain-source voltage of 30V and a continuous drain current of 6A. With an on-resistance of 0.023Ohm and a threshold voltage of 2.5V, this transistor offers efficient performance in various electronic circuits. The surface mount mounting style makes it easy to integrate into existing PCB designs, while the Rds(On) test voltage of 10V ensures reliable operation under specified conditions. Please note that this product is not RoHS compliant
Key Features
- Durable and reliable performance
- Compact size with high power density
Application
DC/DC Converters, High Speed SwitchingSpecifications
Part Life Cycle Code | Active | Reach Compliance Code | compliant |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 30 V |
Drain Current-Max (ID) | 6 A | Drain-source On Resistance-Max | 0.028 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 42 pF |
JEDEC-95 Code | TO-236AB | JESD-30 Code | R-PDSO-G3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 2.5 W | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | DUAL | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Product Category | MOSFET |
Technology | Si | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 6 A |
Rds On - Drain-Source Resistance | 28 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.5 V | Qg - Gate Charge | 4.2 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 2.5 W | Channel Mode | Enhancement |
Tradename | TrenchFET | Series | SI2 |
Fall Time | 7 ns | Product Type | MOSFET |
Rise Time | 11 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 20 ns | Typical Turn-On Delay Time | 3 ns |
Part # Aliases | SI2338DS-T1-BE3 SI2338DS-GE3 | Unit Weight | 0.000282 oz |
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In Stock: 5,464
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