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SI2342DS-T1-BE3 +BOM

N-Channel 8 V 6A (Ta), 6A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

SI2342DS-T1-BE3 General Description

N-Channel 8 V 6A (Ta), 6A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

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Key Features

  • TrenchFET® power MOSFET
  • Low on-resistance
  • 100 % Rg tested
    • Vishay Original Stock
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    Specifications

    Product Category MOSFET Technology Si
    Mounting Style SMD/SMT Transistor Polarity N-Channel
    Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 8 V
    Id - Continuous Drain Current 6 A Rds On - Drain-Source Resistance 17 mOhms
    Vgs - Gate-Source Voltage - 5 V, + 5 V Vgs th - Gate-Source Threshold Voltage 800 mV
    Qg - Gate Charge 6 nC Minimum Operating Temperature - 55 C
    Maximum Operating Temperature + 150 C Pd - Power Dissipation 2.5 W
    Channel Mode Enhancement Configuration Single
    Fall Time 25 ns Product Type MOSFET
    Rise Time 14 ns Factory Pack Quantity 3000
    Subcategory MOSFETs Transistor Type 1 N-Channel
    Typical Turn-Off Delay Time 65 ns Typical Turn-On Delay Time 6 ns
    Part # Aliases SI2342DS-T1-GE3 Unit Weight 0.000282 oz

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    In Stock: 7,072

    Minimum Order: 1

    Qty. Unit Price Ext. Price
    1+ $0.383 $0.38
    200+ $0.153 $30.60
    500+ $0.147 $73.50
    1000+ $0.145 $145.00

    The prices below are for reference only.

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