This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

SI2342DS-T1-GE3 +BOM

The SI2342DS-T1-GE3 is a MOSFET with N-channel configuration

Manufacturer:

Vishay
Mfr.Part #:

SI2342DS-T1-GE3
Datasheet:

SI2342DS-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2342DS-T1-GE3

SI2342DS-T1-GE3 General Description

The SI2342DS-T1-GE3 MOSFET is a high-performance N-channel transistor with an impressive 6A continuous drain current capability. This makes it ideal for power management applications in a variety of electronic devices. With a drain-source voltage rating of 8V and an on-resistance of just 0.014ohm, this MOSFET offers excellent efficiency and reliability. The threshold voltage of 800mV ensures swift and precise operation, while the SOT-23 transistor case style allows for easy integration into existing circuitry. Operating at a maximum temperature of 150°C, this device can withstand demanding operating conditions. The TrenchFET Series designation signifies a superior level of quality and performance, making it a top choice for automotive and industrial applications. With no SVHC present, this MOSFET meets stringent environmental standards

Key Features

High voltage tolerance
Soft start capability
Fault-tolerant design

Application

Load Switches for Low Voltage Gate Drive |Low Voltage Operating Circuits - Gate Drive 1.2 V to 5 V

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	8 V
Id - Continuous Drain Current	6 A	Rds On - Drain-Source Resistance	17 mOhms
Vgs - Gate-Source Voltage	- 5 V, + 5 V	Vgs th - Gate-Source Threshold Voltage	800 mV
Qg - Gate Charge	6 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.5 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	25 ns	Product Type	MOSFET
Rise Time	14 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	65 ns	Typical Turn-On Delay Time	6 ns
Part # Aliases	SI2342DS-T1-BE3	Unit Weight	0.000282 oz