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See Technical Specifications

SI2356DS-T1-GE3 +BOM

channel operation

Manufacturer:

Vishay
Mfr.Part #:

SI2356DS-T1-GE3
Datasheet:

SI2356DS-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2356DS-T1-GE3

SI2356DS-T1-GE3 General Description

Meet the SI2356DS-T1-GE3, a high-performance N-Channel MOSFET transistor that can handle a continuous drain current of 4.3A and a drain-source voltage of 40V. Its low on-resistance of 0.042ohm at a test voltage of 10V ensures minimal power loss and maximum efficiency in your circuit designs. With a threshold voltage of 1.5V, this transistor provides precise control and reliable operation, making it an ideal choice for demanding applications where performance and reliability are crucial

Key Features

None

Application

DC/DC Converter |Load Switch |LED Backlighting |Power Management

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	40 V
Id - Continuous Drain Current	4.3 A	Rds On - Drain-Source Resistance	51 mOhms
Vgs - Gate-Source Voltage	- 12 V, + 12 V	Vgs th - Gate-Source Threshold Voltage	1.5 V
Qg - Gate Charge	3.8 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.7 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	6 ns	Height	1.45 mm
Length	2.9 mm	Product Type	MOSFET
Rise Time	12 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	13 ns	Typical Turn-On Delay Time	6 ns
Width	1.6 mm	Part # Aliases	SI2356DS-T1-BE3
Unit Weight	0.000282 oz