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SI2365EDS-T1-GE3 +BOM

Low Voltage 4.5V 1V at 250uA

Manufacturer:

Vishay
Mfr.Part #:

SI2365EDS-T1-GE3
Datasheet:

SI2365EDS-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2365EDS-T1-GE3

SI2365EDS-T1-GE3 General Description

The SI2365EDS-T1-GE3 is a P-channel MOSFET with a drain source voltage of -20V and a continuous drain current of -5.9A. This MOSFET has a low on resistance of 0.0265ohm and a threshold voltage of -1V. With a power dissipation of 1.7W, this transistor is designed for high power applications. The SOT-23 package style with 3 pins makes it compact and easy to integrate into circuit designs. The operating temperature range of up to 150°C ensures reliable performance in various environments. The SI2365EDS-T1-GE3 is part of the TrenchFET Series, known for its high-quality and performance. It meets automotive qualification standards and has a MSL rating of MSL 1, indicating it can be stored indefinitely. This product does not contain any SVHC substances, making it environmentally friendly and compliant with regulations

Key Features

High-speed switching
Low voltage drop
Compact package

Application

Power Management for Portable and Consumer - Load Switches - DC/DC Converters

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	5.9 A	Rds On - Drain-Source Resistance	26.5 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	13.8 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.7 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	14 ns	Height	1.45 mm
Length	2.9 mm	Product Type	MOSFET
Rise Time	21 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	62 ns	Typical Turn-On Delay Time	22 ns
Width	1.6 mm	Part # Aliases	SI2365EDS-T1-BE3 SI4816DY-T1-E3-S
Unit Weight	0.000282 oz