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SI2366DS-T1-GE3 +BOM

Trans MOSFET N-CH 30V 4.5A 3-Pin SOT-23 T/R

Manufacturer:

VISHAY
Mfr.Part #:

SI2366DS-T1-GE3
Datasheet:

SI2366DS-T1-GE3 Datasheet (PDF)
Series:

TrenchFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

30 V
EDA/CAD Models:

Request Free CAD Models for SI2366DS-T1-GE3

SI2366DS-T1-GE3 General Description

Featuring a low On Resistance (Rds(on) of 0.03ohm at a Test Voltage (Vgs) of 10V, the SI2366DS-T1-GE3 is optimized for efficient power management in circuit designs. Its maximum Operating Temperature of 150°C and minimum Operating Temperature of -55°C make it versatile for both industrial and consumer applications. The high Drain Source Voltage (Vds) of 30V provides a wide margin of safety in high voltage systems. With a Continuous Drain Current (Id) of 5.8A, this MOSFET delivers reliable performance under heavy loads

Key Features

TrenchFET® power MOSFET

100 % Rg tested

Specifications

Series	TrenchFET®	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	5.8A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	36mOhm @ 4.5A, 10V	Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	335 pF @ 15 V	FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 2.1W (Tc)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	SI2366