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SI2369DS-T1-GE3 +BOM

Description: MOSFET with a maximum drain-source voltage of -30V and a maximum gate-source voltage of 20V, packaged in SOT-23

Manufacturer:

Vishay
Mfr.Part #:

SI2369DS-T1-GE3
Datasheet:

SI2369DS-T1-GE3 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for SI2369DS-T1-GE3

SI2369DS-T1-GE3 General Description

The SI2369DS-T1-GE3 is a P channel MOSFET that can handle a continuous drain current of -7.6A and a drain source voltage of -30V. With an on resistance of 0.024ohm and a threshold voltage of -10V, this MOSFET offers excellent performance in power management applications. The SOT-23-3 package ensures easy integration into compact systems, making it suitable for use in portable electronics, battery-powered devices, and other space-constrained applications

Key Features

High-speed switching
Low gate drive current
100V avalanche rating

Application

For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter G

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	7.6 A	Rds On - Drain-Source Resistance	29 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2.5 V
Qg - Gate Charge	11.4 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.5 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	6 ns	Height	1.45 mm
Length	2.9 mm	Product Type	MOSFET
Rise Time	4 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	38 ns	Typical Turn-On Delay Time	13 ns
Width	1.6 mm	Part # Aliases	SI2369DS-T1-BE3
Unit Weight	0.000282 oz